Method for doping semiconductor materials
US6015459A · kind A · utility
401Cited by
7References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 26, 1998 |
| Grant date | Jan 18, 2000 |
| Priority date | — |
| Expiry date | Jun 26, 2018 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/36
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Method is provided for controlling the concentration of a dopant introduced into an epitaxial film during CVD or sublimation growth by controlling the energy of dopant atoms impinging on the film in a supersonic beam. Precursor materials may also be introduced by supersonic beam. Energy of the dopant atoms may be changed by changing flow conditions in the supersonic beam or changing carrier gases. Flow may be continuous or pulsed. Examples of silicon carbide doping are provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.