Process improvements for titanium-tungsten etching in the presence of electroplated C4's
US6015505A · kind A · utility
48Cited by
6References
6Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 30, 1997 |
| Grant date | Jan 18, 2000 |
| Priority date | — |
| Expiry date | Oct 30, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/351
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process and etchant solution for chemical wet etching of thin film metals in the presence of a protected metal. The etching solution has a pH range of about 2.7 to 4.0. The etching solution may include hydrogen peroxide, potassium sulfate, and potassium EDTA, and it reduces or eliminates the incidence of etch-resistant metal without damaging the protected metal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.