Method for growing thin films

US6015590A · kind A · utility

Assignee

• NESTE OY · FI

Inventors

• Tuomo Suntola · Espoo, FI
• Sven Lindfors · Espoo, FI

Key dates

• Filing date: Sep 25, 1996
• Grant date: Jan 18, 2000
• Expiry date: Sep 25, 2016

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C30B25/14
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A method for growing a thin film on a substrate. A substrate is placed in a reaction space. The substrate is subjected to at least two vapor phase reactants in the form of vapor phase pulses, repeatedly and alternately. Gas within the reaction space is purged between two successive vapor phase pulses essentially entirely by use of a pump connected to the reaction space. The reaction space is purged between two successive vapor phase pulses such that less than 1% of the residual components from the first vapor phase pulse remains prior to the inflow of the second vapor phase pulse.