Metal layered semiconductor laser

US6015980A · kind A · utility

Assignee

• The Regents of the University of California · US

Inventors

• John E. Bowers · Lompoc, US
• Daniel Tauber · Iserlohn, DE

Key dates

• Filing date: Mar 28, 1997
• Grant date: Jan 18, 2000
• Expiry date: Mar 28, 2017

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/85
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

By using fusion of a heat spreader layer, a large bandwidth, high power semiconductor laser can be fabricated. The use of multiple metals with low thermal resistance allows for higher power because heat flow is conducted away from the active region easily. The extraction of heat from the active region makes the resultant laser more stable with the capability for higher power outputs.