Lateral bipolar field effect mode hybrid transistor and method for operating the same
US6015982A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Nov 12, 1997 |
| Grant date | Jan 18, 2000 |
| Priority date | — |
| Expiry date | Nov 12, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/409
Abstract
The invention relates to a semiconductor device and a method in this device, wherein the semiconductor device operates completely or partly in lateral extension. The semiconductor device comprises at least two high-voltage lateral bipolar transistors with at least two mutually opposite emitter/base regions, which are placed at the surface of the epi-taxial layer at a mutual distance such that an intermediate common collector region is formed. The common collector region can be completely depleted when the device has a voltage applied and by using a lateral depletion of said collector region, the voltage durability of the semiconductor device can be determined lithographically by the distance between the doped regions comprised in the device. Furthermore, undesired parasitic components, which are dependent on the quality of the active layer of the device, resistivity and substrate potential, can be eliminated or suppressed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.