Method for manufacturing electro-optic element
US6016174A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 26, 1998 |
| Grant date | Jan 18, 2000 |
| Priority date | — |
| Expiry date | Mar 26, 2018 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/1368
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for manufacturing electo-optic elements includes steps of: (a-1) forming gate electrodes of the gate line and the TFT by patterning the first metal thin film by the first photolithography process after forming the first metal thin film on the first insulating substrate, (a-2) patterning by dry etching the semiconductor active film and the ohmic contact film by the second photolithography process in the larger and continuous form than the portion in which the source line and the TFT are formed after forming the first insulating film, semiconductor active film, and ohmic contact film, (a-3) patterning the second metal thin film by the third photolithography process after forming the second metal thin film to form the source electrode and the drain electrode of the source line as well as the TFT and in addition, etch-removing by dry etching the ohmic contact film protruding from the source line, source electrode, and drain electrode, (a-4) patterning the second insulating film and the first insulating film in the fourth photolithography process after forming the second insulating film, and forming a pixel contact hole that penetrates at least to the drain electrode surface, t…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.