Process for manufacturing a sensor with a metal electrode in a metal oxide semiconductor (MOS) structure
US6017775A · kind A · utility
24Cited by
2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 9, 1997 |
| Grant date | Jan 25, 2000 |
| Priority date | — |
| Expiry date | Oct 9, 2017 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N27/414
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The invention relates to a process for manufacturing a sensor with a metal electrode in an MOS structure. During the MOS process, a sensing region with a structure for the metal electrode is formed, this structure being made of a material having predetermined adhesion properties for metals, the sensing region being uncovered by etching the passivating layer, and a metallization of the surface of the MOS structure being carried out in which the metal layer adheres only to the structure for the metal electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.