Fabrication method for a thin film semiconductor device, the thin film semiconductor device itself, liquid crystal display, and electronic device
US6017779A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Feb 13, 1998 |
| Grant date | Jan 25, 2000 |
| Priority date | — |
| Expiry date | Feb 13, 2018 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2202/104
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In order to fabricate a high performance thin film semiconductor device using a low temperature process in which it is possible to use low price glass substrates, a thin film semiconductor device has been fabricated by forming a silicon film at less than 450.degree. C., and, after crystallization, keeping the maximum processing temperature at or below 350.degree. C. In applying the present invention to the fabrication of an active matrix liquid crystal display, it is possible to both easily and reliably fabricate a large, high-quality liquid crystal display. Additionally, in applying the present invention to the fabrication of other electronic circuits as well, it is possible to both easily and reliably fabricate high-quality electronic circuits.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.