Semiconductor laser and method of fabricating semiconductor laser
US6018539A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 9, 1998 |
| Grant date | Jan 25, 2000 |
| Priority date | — |
| Expiry date | Feb 9, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2272
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser includes a first conductivity type semiconductor substrate having a gain region and a spot size changing region adjacent each other; a first conductivity type lower cladding layer disposed on the substrate; an active layer disposed on the lower cladding layer and having a thickness which is uniform in the gain region and gradually decreases in the spot size changing region with distance from the gain region; a second conductivity type upper cladding layer disposed on the active layer and having a stripe-shaped ridge, the ridge extending along the gain region and the spot size changing region; a first electrode disposed on the ridge of the upper cladding layer; and a second electrode disposed on a rear surface of the substrate. Current flow is concentrated in the ridge of the upper cladding layer. Further, when the ridge is fabricated, portions of the active layer in which a current will be injected during operation of the laser are not exposed to the atmosphere and not oxidized, resulting in a highly reliable semiconductor laser with an integrated spot size changing part and gain part.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.