High selectivity slurry for shallow trench isolation processing
US6019806A · kind A · utility
31Cited by
4References
36Claims
0Family size
Inventors
Key dates
| Filing date | Jan 8, 1998 |
| Grant date | Feb 1, 2000 |
| Priority date | — |
| Expiry date | Jan 8, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76224
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This invention is for an improved slurry for shallow trench isolation processing in chemical mechanical polishing of semiconductor devices. The oxide/nitride selectivity is enhanced by increasing the pH of the slurry, increasing the solids content of the slurry and/or by adding a fluoride salt to the slurry. With these modifications, selectivity of greater than 10:1 can be attained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.