Semiconductor component and method of manufacture
US6020611A · kind A · utility
14Cited by
9References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 10, 1998 |
| Grant date | Feb 1, 2000 |
| Priority date | — |
| Expiry date | Jun 10, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/603
Abstract
A semiconductor component includes a substrate (101), an electrode (105) located over the substrate (101), a heavily doped region (542) located in the substrate (101) and self-aligned to the electrode (105), an other heavily doped region (543) located in the substrate (101), a lightly doped region (422) located in the substrate (101) between the heavily doped regions (542, 543) and self-aligned to the electrode (105), and another lightly doped region (432) located in the substrate (101) between the lightly doped region (422) and the other heavily doped region (543).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.