Integrated structure with device having a preset reverse conduction threshold
US6020623A · kind A · utility
2Cited by
5References
17Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 4, 1997 |
| Grant date | Feb 1, 2000 |
| Priority date | — |
| Expiry date | Dec 4, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/619
Abstract
An integrated structure is made in a chip of semiconductor material inside an insulated N type region extending from a surface of the chip. The structure comprises a Zener diode formed by a P type first region extending from the surface inside the insulated region and by a second region of type N extending from the surface inside the first region. These regions form between themselves a buried junction, in which the structure further includes a lateral bipolar transistor having an emitter region provided by the first region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.