Patent · US Expired

Method and apparatus for precharging bitlines in a nonvolatile memory

US6021072A · kind A · utility

15Cited by
5References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 27, 1998
Grant dateFeb 1, 2000
Priority date
Expiry dateJul 27, 2018

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C7/12
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A method for precharging a selected bitline (20) in a nonvolatile memory array using a boost circuit (54) in parallel to a pull-up device (22) for biasing the bitline. The boost circuit (54) is controlled by a pulse signal (26). One embodiment uses a regulator circuit (56) to isolate the boost circuit (54) from the bitline when the bitline voltage exceeds a threshold voltage level. The regulator triggers a delay circuit (58) which is coupled to a sense amplifier (60). The delay circuit (58) then defers activation of the sense amplifier (60) until the voltage on the selected bitline (20) is below a sense amplifier threshold voltage level.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.