Alkaline-earth metal silicides on silicon
US6022410A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 1, 1998 |
| Grant date | Feb 8, 2000 |
| Priority date | — |
| Expiry date | Sep 1, 2018 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/10
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of forming a thin silicide layer on a silicon substrate 12 including heating the surface of the substrate to a temperature of approximately 500.degree. C. to 750.degree. C. and directing an atomic beam of silicon 18 and an atomic beam of an alkaline-earth metal 20 at the heated surface of the substrate in a molecular beam epitaxy chamber at a pressure in a range below 10.sup.-9 Torr. The silicon to alkaline-earth metal flux ratio is kept constant (e.g. Si/Ba flux ratio is kept at approximately 2:1) so as to form a thin alkaline-earth metal silicide layer (e.g. BaSi.sub.2) on the surface of the substrate. The thickness is determined by monitoring in situ the surface of the single crystal silicide layer with RHEED and terminating the atomic beam when the silicide layer is a selected submonolayer to one monolayer thick.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.