Method for production of semiconductor device
US6022774A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 27, 1998 |
| Grant date | Feb 8, 2000 |
| Priority date | — |
| Expiry date | Jan 27, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/68
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is produced by a method which comprises forming a conductor pattern in or on a semiconductor layer, covering the surface of the conductor pattern with an antioxidant conductor layer, forming a first insulating layer on the semiconductor layer, forming a lower electrode of a capacitor on the first insulating layer, forming a dielectric layer of an oxygen-containing material on the lower electrode, forming an upper electrode on the dielectric layer, sequentially patterning the upper electrode, the dielectric layer, and the lower electrode in the shape of a capacitor, forming a second insulating layer covering the semiconductor layer, the antioxidant conductor layer, and the capacitor, patterning the second insulating layer thereby simultaneously forming a first opening and a second opening on the upper electrode and the conductor pattern, heating the interiors of the first opening and the second opening and the upper electrode in an oxygen-containing atmosphere, forming a conductor layer overlying the second insulating layer and filling the interiors of the first and second openings, and patterning the conductor layer thereby forming a first wiring connected to…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.