Method of manufacturing semiconductor device
US6022810A · kind A · utility
6Cited by
10References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 10, 1998 |
| Grant date | Feb 8, 2000 |
| Priority date | — |
| Expiry date | Apr 10, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/768
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An interconnection layer 3 in a floating state and an interlayer insulating film 6 are formed on a semiconductor substrate. A connection hole 4 penetrating the interlayer insulating film and the interconnection layer is formed by dry etching with fluorocarbon. Filled in the connection hole is a conductive member 5 which is electrically connected to the interconnection layer. Accordingly, an improved method for manufacturing a semiconductor device offering a reduced contact resistance even for an extremely small contact hole is obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.