Method and apparatus for manufacturing semiconductor devices
US6022813A · kind A · utility
4Cited by
7References
27Claims
0Family size
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Inventors
Key dates
| Filing date | Aug 22, 1997 |
| Grant date | Feb 8, 2000 |
| Priority date | — |
| Expiry date | Aug 22, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02052
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There are disclosed a method and apparatus for manufacturing semiconductor devices. The surface of each semiconductor substrate is exposed to cyanide ions (CN.sup.-) in order to reduce the density of interface states at the insulating film/semiconductor interface. For this purpose, the semiconductor substrate is immersed into a cyan compound solution or is exposed to a cyan compound gas, so that cyanide ions (CN.sup.-) are bonded to dangling bonds at the surface of the semiconductor substrates. As a result, the interface states at the insulating film/semiconductor interface can be reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.