Group III-V compound semiconductor and light-emitting device
US6023077A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 27, 1996 |
| Grant date | Feb 8, 2000 |
| Priority date | — |
| Expiry date | Nov 27, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0137
Abstract
A Group III-V compound semiconductor of high crystallinity and high quality, and a light-emitting device using the same, which has high luminous efficacy are obtained by providing a specific ground layer composed of at least three layers between the luminous layer and substrate. A light-emitting device capable of inhibiting formation of a misfit dislocation on the interface of the luminous layer and easily emitting light having a longer wavelength is also obtained by controlling the AlN mixed crystal ratio of at least one layer between the luminous layer and the substrate within a specific range and controlling the lattice constant of the luminous layer to a value larger than that of the ground layer, the luminous layer having a compressive strain formed in contact with the ground layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.