Semiconductor Bragg reflector and a method of fabricating said reflector
US6023354A · kind A · utility
14Cited by
4References
4Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 23, 1998 |
| Grant date | Feb 8, 2000 |
| Priority date | — |
| Expiry date | Jun 23, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2081
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor Bragg reflector and to a method of fabricating it. The reflector comprises a plurality of stacked layers on a substrate of a III-V type material, one of the stacked layers forming a holographic grating. The layer forming the grating comprises an alternating succession of air pockets and of III-V type material. Such a reflector is particularly suitable for use in laser devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.