Method for manufacture of a buried structure laser device for integrated photonic circuit
US6025207A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 6, 1998 |
| Grant date | Feb 15, 2000 |
| Priority date | — |
| Expiry date | May 6, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/50
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for the manufacture of a buried structure laser device for integration with an optical guide in a photonic circuit. This method brings about the successive growth, on a buffer layer doped with carriers of a first type and covering the entire surface of a substrate doped with carriers of the same type, a first guiding layer formed by a non-doped quaternary compound, an extremely thin intermediate layer highly doped with carriers of the first type. A second active layer is formed by a non-doped quaternary compound, and a protection layer is doped with carriers of a second type where only the active layer is etched in the form of one or more steps and then buried in a layer of sheathing doped with carriers of the second type.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.