Deep groove structure for semiconductors
US6025209A · kind A · utility
2Cited by
5References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 12, 1997 |
| Grant date | Feb 15, 2000 |
| Priority date | — |
| Expiry date | Aug 12, 2017 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2201/0104
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Deep groove structure for semiconductors comprising a semiconductor substrate, a groove or a cavity formed in said semiconductor substrate and a suspending glass membrane formed on the groove or deep cavity, prepared by a flame hydrolysis deposition process. The suspending glass membrane functions as a planarization structure and has surface at the same level of the surface of the semiconductor substrate. The present invention also discloses a method to prepare the deep groove structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.