Methods of forming capacitor electrodes including a capacitor electrode etch
US6025248A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 7, 1997 |
| Grant date | Feb 15, 2000 |
| Priority date | — |
| Expiry date | Oct 7, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/964
Abstract
A method of forming a capacitor includes the step of forming an electrode on an integrated circuit substrate wherein the electrode covers a first portion of the integrated circuit substrate and wherein the electrode exposes a second portion of the integrated circuit substrate. An etch masking pattern including a plurality of ions is formed on the surface of the electrode wherein the etch masking pattern exposes portions of the surface of the electrode. The exposed portions of the electrode are etched using the etch masking pattern as an etching mask so that recesses are formed in the surface of the electrode thereby increasing a surface area thereof. The etch masking pattern is removed, a dielectric layer is formed on the electrode including the recesses, and a conductive layer is formed on the dielectric layer opposite the electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.