Laser based method and system for integrated circuit repair or reconfiguration
US6025256A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 22, 1997 |
| Grant date | Feb 15, 2000 |
| Priority date | — |
| Expiry date | Jul 22, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76894
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method and system for irradiating resist material from multiple target positions (150) on one or more IC chips (12) with individually directed laser output pulses (74, 94). In one embodiment, an IC (12), including one or more etch targets (104, 106) such as conductive links (72, 92), is coated with an etch protection layer (90) of photoresist material. Then, position data direct, toward multiple positions (150) on the photoresist material, individual laser output pulses (94) of predetermined parameters selected to expose the photoresist material. Because photoresist exposure requires less energy than link blowing, low-power UV lasers (120) can be employed, and their shorter wavelengths permit a smaller practical laser output spot size (98). Because the nonablative process does not generate debris, an optical component (148) can be brought within 10 mm of etch protection layer (90) to focus the laser output pulses (94) to a spot size of less than two times the wavelength of laser output (140). Thus, an advantage of this embodiment permits microcircuit manufacturers to decrease the pitch distance (28) between circuit elements (14). After the photoresi…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.