Vacuum film formation method and device
US6025266A · kind A · utility
1Cited by
0References
12Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 3, 1997 |
| Grant date | Feb 15, 2000 |
| Priority date | — |
| Expiry date | Sep 3, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28568
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A vacuum film formation device is proposed in which when forming TiN/Ti films before forming a W film, the W film is prevented from peeling, the Ti film can be formed on all the surfaces of a wafer, and a chamber can be alternately used for forming the TiN film or the Ti film, thereby enlarging the film-forming effective area and improving the productivity. For this purpose, a drive mechanism 1 of a cover shield 2 is provided in a vacuum device chamber. When the films are formed, the vertical position of the cover shield 2 is changed by the drive mechanism 1 when forming the TiN film and when forming the Ti film, respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.