Method of forming improved thick plated copper interconnect and associated auxiliary metal interconnect
US6025275A · kind A · utility
54Cited by
4References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 17, 1997 |
| Grant date | Feb 15, 2000 |
| Priority date | — |
| Expiry date | Dec 17, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thick plated interconnect (80) may be fabricated by forming a metal layer (20) above a semiconductor layer (12). A dielectric layer (22) may be formed on the metal layer (20). A via (24) may be formed in the dielectric layer (22) to expose the metal layer (20). A copper lead (50) may be formed electrically coupled to the metal layer (20) through the via (24) of the dielectric layer (22). A barrier member (88) may be formed on the copper lead (50). A bondable member (86) comprising aluminum may be formed on the barrier member (88).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.