Boron-carbide and boron rich rhobohedral based transistors and tunnel diodes
US6025611A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Sep 19, 1997 |
| Grant date | Feb 15, 2000 |
| Priority date | — |
| Expiry date | Sep 19, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/80
Abstract
The present invention relates to the fabrication of a boron carbide/boron diode on an aluminum substrate, and a boron carbide/boron junction field effect transistor. Our results suggest that with respect to the approximately 2 eV band gap pure boron material, 0.9 eV band gap boron carbide (B.sub.5 C) acts as a p-type material. Both boron and boron carbide (B.sub.5 C) thin films were fabricated from single source borane cage molecules using plasma enhanced chemical vapor deposition (PECVD). Epitaxial growth does not appear to be a requirement. We have doped boron carbide grown by plasma enhanced chemical vapor deposition. The source gas closo-1,2-dicarbadecaborane (orthocarborane) was used to grow the boron carbide while nickelocene (Ni(C.sub.5 H.sub.5)2) was used to introduce nickel into the growing film. The doping of nickel transformed a B.sub.5 C material p-type relative to lightly doped n-type silicon to an n-type material. Both p-n heterojunction diodes and n-p heterojunction diodes with n- and p-type Si [1,1,1] respectively. With sufficient partial pressures of nickelocene in the plasma reactor diodes with characteristic tunnel diode behavior can be successfully fabricated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.