Controlled solder interdiffusion for high power semiconductor laser diode die bonding
US6027957A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 27, 1996 |
| Grant date | Feb 22, 2000 |
| Priority date | — |
| Expiry date | Jun 27, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and a resulting device for mounting a semiconductor to a submount by depositing a first layer of a first metal solder having a selected first melting point and corresponding thickness onto a surface of the semiconductor. Depositing a second layer of a second metal solder having a selected second melting point higher than the first melting point and a corresponding selected thickness onto a surface of the submount. Disposing the semiconductor surface and submount surface in confronting intimate contact and heating the submount and semiconductor to a temperature greater than the first temperature and lower that the second temperature for initiating and promoting liquid interdiffusion between the first and second solders.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.