Bandgap tuning of semiconductor well structure
US6027989A · kind A · utility
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Key dates
| Filing date | Oct 28, 1997 |
| Grant date | Feb 22, 2000 |
| Priority date | — |
| Expiry date | Oct 28, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/4087
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In a method of bandgap tuning of a quantum well heterostructure wherein ions are implanted in the heterostructure by ion implantation, the ions are implanted so that different regions are implanted in such a way as to create different concentrations of defects. This provides varying bandgap energies to various areas of the heterostructure during a subsequent thermal treatment, which removes residual defects and initiates intermixing in the quantum well region to result in a structure having a selectively shifted bandgap.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.