HEMT double hetero structure

US6028328A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Henning Riechert · Riemerling, DE
• Thomas Grave · Hersbruck, DE

Key dates

• Filing date: Jun 18, 1998
• Grant date: Feb 22, 2000
• Expiry date: Jun 18, 2018

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/4732

Abstract

DH-PHEMT on a GaAs substrate, with a mixed crystal composition that is varied in the channel in such a way that the lower boundary of the conduction band is lowered toward the gate contact, and advantages of an SH-PHEMT are thereby simultaneously realized. For this purpose, the channel is for example InGaAs, and the In portion x of the In.sub.x Ga.sub.1-x As of the channel is increased in a step from 0.2 to 0.3 in the direction toward the gate contact.