CMOS sensor having a structure to reduce white pixels

US6028330A · kind A · utility

Assignee

• Dyna Image Corporation · TW

Inventors

• Sheng-Ti Lee · Taipei, TW
• Chi-Ting Shen · Taipei, TW
• Chi F. Chen · Taipei, TW
• Chien-I Fu · Taipei, TW
• Chao-Jung Chen · New Taipei, TW
• Wei Chen · Fremont, US

Key dates

• Filing date: Aug 4, 1998
• Grant date: Feb 22, 2000
• Expiry date: Aug 4, 2018

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/802

Abstract

A sensor device has a field oxide layer deposited over a substrate. The field oxide layer has opposing sharp edges that define a window. A sensor is formed in the window with a distance between the sensor and each sharp edge that defines the window. The distance forms a gap that reduces the effects of the sharp edges on the sensor, thereby reducing the current leakage from the sensor. In addition, a protective layer may be disposed over the distance and the sharp edges of the field oxide layer to further protect the sharp edges from damage that may be caused from further processing.