Magnetic memory element having coupled magnetic layers forming closed magnetic circuit
US6028786A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Apr 27, 1998 |
| Grant date | Feb 22, 2000 |
| Priority date | — |
| Expiry date | Apr 27, 2018 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/15
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic memory element comprising a first magnetic layer magnetized in an orientation of magnetization along one in-plane direction, a second magnetic layer magnetized in an orientation of magnetization parallel or antiparallel to the orientation of magnetization of the first magnetic layer, the second magnetic layer having a higher coercive force than that of the first magnetic layer, a non-magnetic layer interposed between the first magnetic layer and the second magnetic layer, and a third magnetic layer for magnetically coupling the first magnetic layer with the second magnetic layer in order to form a closed magnetic circuit with the first magnetic layer and the second magnetic layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.