Nonvolatile semiconductor memory device and erasing method of the same
US6028794A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 15, 1998 |
| Grant date | Feb 22, 2000 |
| Priority date | — |
| Expiry date | Jan 15, 2018 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/349
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile semiconductor memory device comprises a plurality of nonvolatile memory cells, which can be electrically programmed and erased, the plurality of nonvolatile memory cells divided into a plurality of blocks, a block erase circuit for erasing the plurality of nonvolatile memory cells contained in the plurality of blocks at the same time per block, erase operation times storage section for storing the number of erase operations of the nonvolatile memory cells to be erased at the same time by the block erase circuit per block in a number of erase operation storage region, and read time setting section for setting the read time based on the number of the erase operations stored in the number of erase operation storage region at the time of reading the storage data in the nonvolatile memory cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.