Buried heterostructure laser with quaternary current blocking layer
US6028875A · kind A · utility
29Cited by
6References
23Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 11, 1996 |
| Grant date | Feb 22, 2000 |
| Priority date | — |
| Expiry date | Oct 11, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3434
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The lateral confinement region provided on both sides of an active region stripe of a buried heterostructure laser is formed of an alloy of InGaAsP instead of the conventional Fe doped InP material. This results in much improved regrowth morphology while still achieving good current and light blocking properties.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.