Common contact hole structure in semiconductor device
US6031291A · kind A · utility
11Cited by
5References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 30, 1995 |
| Grant date | Feb 29, 2000 |
| Priority date | — |
| Expiry date | Oct 30, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B10/15
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device having a semiconductor substrate, an impurity diffused layer formed in a principal surface of the semiconductor substrate, a conductive member formed on the semiconductor substrate adjacent to the impurity diffused layer and having a sloped surface inclined to the principal surface of the semiconductor substrate, an insulator film deposited to cover the impurity diffused layer and the conductive member, and a common contact hole formed through the insulator film to extend over a surface of the impurity diffused layer and the sloped surface of the conductive member.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.