Mode-locked semiconductor laser and method of driving the same
US6031851A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 9, 1997 |
| Grant date | Feb 29, 2000 |
| Priority date | — |
| Expiry date | Oct 9, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/0265
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
There is provided a mode-locked semiconductor laser including a saturable absorber section, a gain section having the same composition as that of the saturable absorber section, a non-absorptive waveguide section having an absorption edge wavelength shorter than an oscillation wavelength of the gain section, an electroabsorption modulator section having an absorption edge wavelength intermediate between an oscillation wavelength of the gain section and an absorption edge wavelength of the non-absorptive waveguide section, and a distributed Bragg reflector section having the same composition as that of the non-absorptive waveguide section and including a diffraction grating. These five sections are optically coupled to one another in a single waveguide. The above-mentioned mode-locked semiconductor laser makes it possible to enhance an efficiency with which high frequency signals are applied thereto, with conditions for causing saturable absorption operation, such as a section length and a bias voltage, being kept in an optimal range.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.