Magnetron sputtering method and sputtering target
US6033536A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 8, 1996 |
| Grant date | Mar 7, 2000 |
| Priority date | — |
| Expiry date | Mar 8, 2016 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/3414
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A magnetron sputtering method using a sputtering target consisting of a material having a maximum relative magnetic permeability of 50 or more or consisting of a soft magnetic material which contains two or more phases selected from the group consisting of an M--X alloy phase, an M phase, and an X phase in that at least the simple substance phase consisting of an element having a smaller atomic weight of M and X is included, with the proviso that M.noteq.X, M is at least one element selected from the group consisting of Fe, Co and Ni, and X is at least one element selected from the group consisting of Fe, Al, Si, Ta, Zr, Nb, Hf and Ti.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.