Method for fabricating a field emission device
US6033924A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 25, 1997 |
| Grant date | Mar 7, 2000 |
| Priority date | — |
| Expiry date | Jul 25, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J9/025
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a field emission device (200) includes the steps of forming on the surface of a substrate (110) a cathode (112), forming on the cathode (112) a dielectric layer (114), forming an emitter well (115) in the dielectric layer (114), forming within the emitter well (115) an electron emitter structure (118) having a surface (123), forming on a portion of the dielectric layer (114) a gate electrode (116), depositing on the dielectric layer (114) a sacrificial layer (210), thereafter depositing on the surface (123) of the electron emitter structure (118) a coating material (220, 320, 420) that has an emission-enhancing material, and then removing the sacrificial layer (210).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.