Method for manufacturing a SOI-type semiconductor structure
US6033925A · kind A · utility
4Cited by
9References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 27, 1997 |
| Grant date | Mar 7, 2000 |
| Priority date | — |
| Expiry date | May 27, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/977
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a method for manufacturing a semiconductor wafer having a SOI wafer-like structure which is prepared on a silicon substrate by electrochemical etching, and an active-driven liquid crystal display employing the semiconductor wafer as a pixel switching wafer. In accordance with the method for manufacturing the SOI-type semiconductor wafer, a wafer having a good electrical insulation property, low leakage current and small parasitic capacity, like a SOI wafer, can be prepared, by employing a silicon substrate which is cheaper than the SOI substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.