Method of manufacturing a semiconductor device

US6033952A · kind A · utility

Assignee

• Mitsubishi Electric Corporation · JP

Inventors

• Shunji Yasumura · Tokyo, JP
• Shinya Watanabe · Tochigi, JP

Key dates

• Filing date: May 10, 1999
• Grant date: Mar 7, 2000
• Expiry date: May 10, 2019

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/711

Abstract

A semiconductor device manufacturing method which involves a fewer number of manufacturing processes and which eliminates the use of expensive high precision stepper and half-tone mask, or the like, by employing a simplified process flow, in which method an identical mask is reused to ensure registration margin without involving a high-resolution process. A contact hole requires solely a minimum diameter of 0.30 .mu.m or thereabouts, thereby resulting in and added margin for the minimum diameter and eliminating a process for reducing a hole diameter. Even if the hole diameter has a deviation of about 0.05 .mu.m, contact can be established with a silicon substrate, thereby eliminating a necessity for an expensive, high precision stepper which has been required for ensuring a registration margin. A damaged layer, which would otherwise cause an increase in the resistance of the storage node direct contact, is eliminated simultaneously with etching of a thick polysilicon film, thus eliminating a chemical dry etching (CDE) process which has conventionally been used for removing a damaged layer.