Process of selectively producing refractory metal silicide uniform in thickness regardless of conductivity type of silicon thereunder
US6033978A · kind A · utility
7Cited by
12References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 21, 1996 |
| Grant date | Mar 7, 2000 |
| Priority date | — |
| Expiry date | Nov 21, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Amorphous silicon layers are formed on an n-type single-crystal/poly-crystal layer and a p-type single-crystal/poly-crystal layer, and titanium is sputtered on the amorphous silicon layers; although the n-type dopant impurity are piled on the n-type single-crystal/poly-crystal layers, the amorphous silicon layers takes the piles of n-type dopant impurity thereinto, and promote the silicidation of the titanium layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.