Active matrix substrate and display device incorporating the same
US6034747A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 25, 1996 |
| Grant date | Mar 7, 2000 |
| Priority date | — |
| Expiry date | Sep 25, 2016 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/136227
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An active matrix substrate includes a gate line, a source line, and a thin film transistor provided in the vicinity of an intersection between the gate line and the source line. The thin film transistor includes a gate electrode connected to the gate line, a source electrode connected to the source line, and a drain electrode connected to a pixel electrode. An interlayer insulating film is provided over the thin film transistor, the gate line, and the source line. The pixel electrode is provided on the interlayer insulating film, and is connected to the drain electrode via a contact hole formed in the interlayer insulating film. A conductive layer extends over a channel region of the thin film transistor via the interlayer insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.