Method of fabricating compound semiconductor device and optical semiconductor device
US6034983A · kind A · utility
20Cited by
13References
7Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 29, 1998 |
| Grant date | Mar 7, 2000 |
| Priority date | — |
| Expiry date | Apr 29, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/935
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A fabricating method of compound semiconductor device is proposed which has a step of varying selective growth ratio of crystal by changing either a mean free path of material gas in gas atmosphere for use in crystal growth or a thickness of a stagnant layer of the material gas, using selective growth mask having opening portion consisting of first region having a narrow width and second region having a wide width.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.