Electron beam proximity correction method for hierarchical design data
US6035113A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 5, 1998 |
| Grant date | Mar 7, 2000 |
| Priority date | — |
| Expiry date | Jan 5, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31769
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for formulating an exposure dose for an electron beam on a resist film for a pattern of geometric shapes which compensates for electron scattering effects utilizing hierarchial design data which is preserved to as great as an extent as possible in the computation of the exposure dose. The exposure dose is corrected for both the forward scatter and backscatter effects of the electron beam in which the design data is modified for interactions of shapes which are affected only over the forward scatter range. In another version of the method, a multiple Gaussian approximation is used where the short term Gaussian terms are treated as the forward scatter terms and the long term Gaussian terms are treated as the back scatter terms.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.