Method for growing Group III atomic layer
US6036773A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 27, 1997 |
| Grant date | Mar 14, 2000 |
| Priority date | — |
| Expiry date | Mar 27, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/813
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A Group III atomic layer required for fabrication of a semiconductor quantum nanostructure is grown to be properly restricted to a monolayer. A substrate is configured to have a fast-growth surface portion where growth of a Ga atomic layer proceeds at a relatively high rate and a slow-growth surface portion where the growth of the Ga atomic layer proceeds at a relatively low rate. Ga atoms are supplied to the fast-growth surface portion in an amount not less than that which grows one layer of the Group III atoms. Excess Ga atoms on the fast-growth surface portion are allowed to migrate to the slow-growth surface portion by surface migration, thereby growing only one layer of the Ga atoms on the fast-growth surface portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.