Apparatus and method for depositing a semiconductor material
US6037241A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 19, 1998 |
| Grant date | Mar 14, 2000 |
| Priority date | — |
| Expiry date | Feb 19, 2018 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC03C2218/151
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Apparatus (12, 12a) and a method for depositing a semiconductor material on a glass sheet substrate (G) utilizes a distributor (22) including a heated permeable member (24) through which a carrier gas and a semiconductor material are passed to provide a vapor that is deposited as a semiconductor layer on the conveyed glass sheet substrate. The permeable member (24) is tubular and has an electrical voltage applied along its length to provide the heating, and the carrier gas and the semiconductor as a powder are introduced into the tubular permeable member for flow outwardly therefrom as the vapor. A shroud (34) extending around the tubular permeable member (24) has an opening (36) through which the vapor flows for the semiconductor layer deposition. In one embodiment of apparatus (12), the semiconductor layer is deposited on an upwardly facing surface (56) of the glass sheet substrate (G) while another embodiment of the apparatus (12a) deposits the semiconductor layer on a downwardly facing surface (54) of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.