Method of etching metallic film for semiconductor devices
US6037267A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 16, 1998 |
| Grant date | Mar 14, 2000 |
| Priority date | — |
| Expiry date | Jul 16, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32136
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is provided a method of etching metallic film for a semiconductor device, in which a semiconductor substrate with a metallic film exposed in a film pattern is inserted onto a chuck in a chamber of an electrostatic shielded radio frequency (ESRF) inductive-coupled plasma source, the ESRF inductive-coupled plasma source also including a coil connected to an upper electrode, a lower electrode connected to the chuck, a gas supply assembly, a pressure control assembly and a temperature control assembly. An etching gas is supplied to the chamber at a predetermined etch gas supply rate. Pressure inside the chamber is maintained at a predetermined pressure level. The upper and lower electrodes are powered with predetermined upper and lower powers, respectively, at predetermined upper and lower RFs, respectively. The chamber walls are cooled to a predetermined temperature. The metallic film is etched such that trenches in the metallic film are formed with predetermined trench qualities including a predetermined trench critical dimension no greater than a critical dimension associated with large scale integration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.