Semiconductor structures with trench contacts
US6037628A · kind A · utility
99Cited by
7References
9Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 30, 1997 |
| Grant date | Mar 14, 2000 |
| Priority date | — |
| Expiry date | Jun 30, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/256
Abstract
Semiconductor structures such as the trench and planar MOSFETs (UMOS), trench and planar IGBTs and trench MCTs using trenches to establish a conductor. Improved control of the parasitic transistor in the trench MOSFET is also achieved and cell size and pitch is reduced relative to conventional structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.