Semiconductor device
US6037632A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 5, 1996 |
| Grant date | Mar 14, 2000 |
| Priority date | — |
| Expiry date | Nov 5, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/258
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is disclosed, which comprises a first main electrode, a second main electrode, a high-resistance semiconductor layer of first conductivity type interposed between the first main electrode and the second main electrode, and at least a buried layer of second conductivity type selectively formed in the semiconductor layer, extending at substantially right angles to a line connecting the first and second main electrodes, comprising a plurality strips functioning as current paths and set at a potential different from a potential of any other electrode when a depletion layer extending from a region near the first main electrode reaches the buried layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.