Control of saturation of integrated bipolar transistors
US6037826A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 28, 1993 |
| Grant date | Mar 14, 2000 |
| Priority date | — |
| Expiry date | Jul 28, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K17/0422
- WIPO fieldControl
- WIPO sectorInstruments
Abstract
Saturation of a bipolar power transistor is controlled by sensing the current which is eventually injected into the substrate of the integrated circuit by the saturating transistor and using this signal for exerting a limiting action on the current which is driven to the base of the power transistor by a dedicated driving circuit. Unlike the prior art antisaturation systems, it is no longer necessary to precisely monitor the operating voltages across the terminals of the bipolar power transistor. A suitable sensing resistance may be integrated conveniently at a distance from the often complex integrated structure of the bipolar transistor. The system of the invention offers numerous advantages and ensures intervention of the antisaturation circuit only when the power transistor has positively reached a state of saturation, but well before any unwanted consequence.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.