Electrically erasable and programmable non-volatile memory protected against power supply failure
US6038190A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 7, 1998 |
| Grant date | Mar 14, 2000 |
| Priority date | — |
| Expiry date | Dec 7, 2018 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/225
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
To reduce the risks of erroneous data writing into an electrically erasable and programmable non-volatile memory (10) (EEPROM) when a failure in the memory (10) voltage supply (Vcc) occurs during a programming or erasing operation, the memory (10) comprising means (30) of generating programming or erasing high voltage (Vpp), means (SW.sub.i, TI.sub.i,) are provided for maintaining the high voltage (Vpp) supply to the cells (C.sub.i,j) of the memory and capacity (Chv, CR.sub.2) of sufficient power to maintain the high voltage (Vpp) during the time required for the programming or erasing operation. The invention is useful particularly for EEPROM memories mounted on chip cards and electronic labels.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.